Power Up

Power electronics has undergone an interesting change towards new Wide-bandgap (WBG) semiconductors (WBG). Significant impact factors for the growth of the WBG semiconductor market include the growing demand for improved energy efficiency and increased demand for long-life batteries. In power electronics, gallium nitride (GaN) and silicon carbide (SiC) wide bandgap semiconductors are used as a solution to slow down Silicon in high temperature and high power segments. GaN device manufacturers’

Power electronics has undergone an interesting change towards new Wide-bandgap (WBG) semiconductors (WBG). Significant impact factors for the growth of the WBG semiconductor market include the growing demand for improved energy efficiency and increased demand for long-life batteries. In power electronics, gallium nitride (GaN) and silicon carbide (SiC) wide bandgap semiconductors are used as a solution to slow down Silicon in high temperature and high power segments. GaN device manufacturers’

Power electronics has undergone an interesting change towards new Wide-bandgap (WBG) semiconductors (WBG). Significant impact factors for the growth of the WBG semiconductor market include the growing demand for improved energy efficiency and increased demand for long-life batteries. In power electronics, gallium nitride (GaN) and silicon carbide (SiC) wide bandgap semiconductors are used as a solution to slow down Silicon in high temperature and high power segments. GaN device manufacturers’

In this episode, our guest is Simon Wood, Senior Director of RF Product Development and Applications at Wolfspeed, A Cree company. During his caree, Simon has designed amplifiers using SiC and GaN HEMT devices. We speak with him about different aspects of Gallium Nitride (GaN) for RF applications, the main topics are GaN-on-SiC and GaN HEMT.

In this episode, our guest is Simon Wood, Senior Director of RF Product Development and Applications at Wolfspeed, A Cree company. During his caree, Simon has designed amplifiers using SiC and GaN HEMT devices. We speak with him about different aspects of Gallium Nitride (GaN) for RF applications, the main topics are GaN-on-SiC and GaN HEMT.

In this episode, our guest is Simon Wood, Senior Director of RF Product Development and Applications at Wolfspeed, A Cree company. During his caree, Simon has designed amplifiers using SiC and GaN HEMT devices. We speak with him about different aspects of Gallium Nitride (GaN) for RF applications, the main topics are GaN-on-SiC and GaN HEMT.